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| GaAIAs-IR-Lumineszenzdiode (880 nm) GaAIAs Infrared Emitter (880 nm) SFH 486 Area not flat 0.6 0.4 2.54 mm spacing 0.8 0.4 9.0 8.2 7.8 7.5 o5.1 o4.8 5.9 5.5 Anode 1.8 1.2 29.5 27.5 5.7 5.1 Chip position 0.6 0.4 Approx. weight 0.5 g GEX06626 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Hergestellt im Schmelzepitaxieverfahren q Hohe Zuverlassigkeit q Gute spektrale Anpassung an Si-Fotoempfanger Anwendungen q IR-Fernsteuerung von Fernseh- und Features q Fabricated in a liquid phase epitaxy process q High reliability q Spectral match with silicon photodetectors Applications q IR remote control of hi-fi and TV-sets, video Rundfunkgeraten, Videorecordern, Lichtdimmern q Geratefernsteuerungen fur Gleich- und Wechsellichtbetrieb Typ Type SFH 486 Bestellnummer Ordering Code Q62703-Q1094 tape recorders, dimmers q Remote control for steady and varying intensity Semiconductor Group 1 1997-11-01 fex06626 SFH 486 Grenzwerte (TA = 25 C) Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlastrom Forward current Stostrom, tp = 10 s, D = 0 Surge current Verlustleistung Power dissipation Warmewiderstand Thermal resistance Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Wellenlange der Strahlung Wavelength at peak emission IF = 100 mA Spektrale Bandbreite bei 50 % von Irel Spectral bandwidth at 50 % of Irel IF = 100 mA Abstrahlwinkel Half angle Aktive Chipflache Active chip area Abmessungen der aktive Chipflache Dimension of the active chip area Abstand Chipoberflache bis Linsenscheitel Distance chip front to lens top Symbol Symbol peak Wert Value 880 Einheit Unit nm Symbol Symbol Wert Value - 55 ... + 100 100 5 100 2.5 200 375 Einheit Unit C C V mA A mW K/W Top; Tstg Tj VR IF IFSM Ptot RthJA 80 nm 11 0.16 0.4 x 0.4 Grad deg. mm2 mm A LxB LxW H 5.1 ... 5.7 mm Semiconductor Group 2 1997-11-01 SFH 486 Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Schaltzeiten, Ie von 10 % auf 90 % und von 90 % auf 10 %, bei IF = 100 mA, RL = 50 Switching times, Ie from 10 % to 90 % and from 90 % to 10 %, IF = 100 mA, RL = 50 Kapazitat Capacitance VR = 0 V, f = 1 MHz Durchlaspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s Sperrstrom Reverse current VR = 5 V Gesamtstrahlungsflu Total radiant flux IF = 100 mA, tp = 20 ms Temperaturkoeffizient von Ie bzw. e, Temperature coefficient of Ie or e, IF = 100 mA Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA Temperaturkoeffizient von , IF = 100 mA Temperature coefficient of , IF = 100 mA Symbol Symbol Wert Value 0.6/0.5 Einheit Unit s tr, tf Co 25 pF VF VF IR 1.50 ( 1.8) 3.00 ( 3.8) 0.01 ( 1) V V A e 25 mW TCI - 0.5 %/K IF = 100 mA TCV TC -2 0.25 mV/K nm/K Strahlstarke Ie in Achsrichtung gemessen bei einem Raumwinkel = 0.001 sr Grouping of radiant intensity Ie in axial direction at a solid angle of = 0.001 sr Bezeichnung Description Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Strahlstarke Radiant intensity IF = 1 A, tp = 100 s Symbol Wert Value 40 typ. 60 Einheit Unit mW/sr mW/sr Ie min Ie max Ie typ. 600 mW/sr Semiconductor Group 3 1997-11-01 SFH 486 Relative spectral emission Irel = f () 100 rel % 80 OHR00877 Ie = f (IF) Ie 100 mA Single pulse, tp = 20 s Radiant intensity 10 2 e e (100mA) 10 1 OHR00878 Max. permissible forward current IF = f (TA) 125 OHR00880 F mA 100 60 10 0 75 40 10 -1 50 20 10 -2 25 0 750 10 -3 800 850 900 950 nm 1000 10 0 10 1 10 2 10 3 mA 10 4 F 0 0 20 40 60 80 C 100 T Forward current IF = f (VF), single pulse, tp = 20 s 10 1 OHR00881 Permissible pulse handling capability IF = f (), TA = 25 oC, duty cycle D = parameter 10 4 mA OHR00886 Forward current versus lead length between the package bottom and the PC-board IF = f (l), TA = 25 oC 120 mA OHR00949 F A F 10 0 10 3 0.1 0.2 D = 0.005 0.01 0.02 0.05 F 100 80 10 -1 0.5 10 2 DC 60 40 10 -2 D= 10 -3 tp T tp F 20 0 1 2 3 4 5 6 V VF 8 T 10 1 -5 -4 -3 -2 10 10 10 10 10 -1 10 0 0 10 1 s 10 2 tp 0 5 10 15 20 25 mm 30 Radiation characteristics Irel = f () 40 30 20 10 0 1.0 OHR01733 50 0.8 60 0.6 70 0.4 80 90 0.2 0 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Semiconductor Group 4 1997-11-01 |
Price & Availability of Q62703-Q1094
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